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Semiconductor Devices for Next Generation Field Effect Transistors (More than Moore): A Physics Perspective

By Prof. Sudeb Dasgupta   |   IIT Roorkee
Learners enrolled: 1418   |  Exam registration: 30
ABOUT THE COURSE:
This course is beneficial for the students/learners who want to pursue their careers in VLSI industry or academics. The lecture series start with basic capacitor MOS and go through various advanced devices including beyond CMOS technology and their progress in the VLSI industry. The students will get the understanding of various Field-Effect-Transistor (FET) includes MOSFET, GAA FET, NC FET, High Power FET, 2D Material Based FET, etc. I believe that the students/learners will be greatly benefitted by understanding of cutting-edge technologies of the VLSI domain.

INTENDED AUDIENCE: UG(Final Year Elective)/Postgraduate/PhD/ VLSI Industry Working Professional

PREREQUISITES: 1. Basic electronics devices 2. Basic semiconductor

INDUSTRY SUPPORT: TCAD and EDA Companies, Semiconductor companies such as NXP, Cadence, Qualcomm, GF, TI, NVIDIA, Intel,
Summary
Course Status : Upcoming
Course Type : Elective
Language for course content : English
Duration : 12 weeks
Category :
  • Electrical, Electronics and Communications Engineering
  • VLSI design
Credit Points : 3
Level : Undergraduate/Postgraduate
Start Date : 20 Jan 2025
End Date : 11 Apr 2025
Enrollment Ends : 27 Jan 2025
Exam Registration Ends : 14 Feb 2025
Exam Date : 27 Apr 2025 IST

Note: This exam date is subject to change based on seat availability. You can check final exam date on your hall ticket.


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Course layout

Week 1: MOS Capacitors

Class1 - Introductory of Subject
Class 2 - Introduction of Metal-Oxide-Semiconductor
Class 3 - Energy Band Diagram of MOS Capacitors
Class 4 - Second Order Effects in MOS Capacitors
Class 5 - C–V of MOS capacitor

Week 2: MOSFET and Application

Class1 - Introduction of MOSFET
Class 2 - I-V and C-V Characteristics of MOSFETs
Class 3 - Capacitance Modeling for HF & LF
Class 4 - High and Low Frequency Modeling in Bulk MOSFET
Class 5 - MOSFET as Switch and Amplifier

Week 3: MOSFET SPICE Models

Class 1 - Introduction to MOSFET SPICE Models
Class 2 - Discuss Various SPICE Models equations
Class 3 - SPICE Models for the MOS Transistor
Class 4 - The SPICE Diode Models
Class 5 - Practical Aspects and Simulation Techniques

Week 4: Semiconductor Heterostructures

Class1 - Introduction
Class 2 - Carriers and Transports
Class 3 - Band Diagram of Heterostructure
Class 4 - PN Heterojunction Diode
Class 5 - Properties and Application

 Week 5: Short Channel Effects

 Class1 - Introduction to 2nd Order Effects at Lower Technology Node
 Class 2 - Gate Induced Drain Leakage (GIDL), Drain Induced Barrier Lowering (DIBL), and Subthreshold Swing (SS)
 Class 3 - Mobility and Scattering Effects
 Class 4 - Velocity Saturation Effects
 Class 5 - Hot Carrier Effect, Self-heating Effect

 Week 6: Double Gate MOSFET

 Class1 - Introduction to Double Gate MOSFET
 Class 2 - SOI MOSFET, Partially and Fully Depleted MOSFET
 Class 3 - Subthreshold Swing and Transconductance
 Class 4 - Small and Large Signal Modeling
 Class 5 - Introduction of Junctionless MOSFET

 Week 7: FinFET: A successor of MOSFET

 Class 1 - Introduction to FinFETs Structure
 Class 2 - Structural Classification of FinFETs
 Class 3 - RLC FinFET Modeling
 Class 4 - High Frequency Small Signal Modeling
 Class 5 - Device Circuit Co-Design using FinFET with Suitable Examples

 Week 8: Gate-All-Around FETs: Sub 5nm Node Devices

 Class 1 - Introduction of Different Types of GAA Structure
 Class 2 - Current Trends in GAA Devices
 Class 3 - Nanosheet FET
 Class 4 - Process Variation in Nanosheet FET
 Class 5 - Analog Perspective of Nanosheet FET

Week 9: Forksheet FET and CFET : Sub 3nm Node

 Class 1 - Introduction to Forksheet FET
 Class 2 - Discuss the challenges of Forksheet
 Class 3 - CFET Advancements and Industry Adoption
 Class 4 - Discuss the Circuit Design Challenges with CFET
 Class 5 - CFET Optimization for Semiconductor Scaling

 Week 10: Negative Capacitance: Improved Subthreshold Swing

 Class 1 - Negative Capacitance (NC): A Concept Note
 Class 2 - FeFET & FeFET Based Memory
 Class 3 - Advantages and Challenges of NCFETs
 Class 4 - Modelling of NCFETs
 Class 5 - Introduction of Phase Transition Material (PTM)

 Week 11: III-V Semiconductor FETs

 Class 1 - Introduction of III-V materials
 Class 2 - Materials for High-Speed Devices and Circuits
 Class 3 - High Electron Mobility Transistors (HEMT): Modelling and Simulation
 Class 4 - III-V Semiconductor FET
 Class 5 - Application of III-V material-based FET

Week 12: 2D Materials for Next Generation Computing 

 Class 1 - Fundamental Understanding of 2D Material
 Class 2 - Physics Properties of 2D Materials
 Class 3 - Challenges and Future Scope
 Class 4 - Application of 2D Material
 Class 5 - 2D-FETs

Books and references

1. Neamen, Donald A. Semiconductor physics and devices: basic principles. New York, NY: McGraw-Hill, 2012.
2. R. F. Pierret, Semiconductor Device Fundamentals, 1996.
3. Jean-Pierre Colinge, FinFETs and Other Multi-Gate Transistors, 2008.

Instructor bio

Prof. Sudeb Dasgupta

IIT Roorkee
Prof.Sudeb Dasgupta is currently working as a Professor in Microelectronics/VLSI in the Department of Electronics and Communication Engineering. He has around 23 years of teaching experience at undergraduate and post-graduate level. His research interest is in device modelling, device-circuit co- design, radiation hardened technologies, Compute-in-memory. He is also working in the area of low power design and data converters for bio-medical applications. He has published more than 250 papers in peer reviewed journals and conferences. He has graduated 17 research scholars in various areas of devices and circuits.

Details are available here: https://ece.iitr.ac.in/sudeb-dasgupta/

Course certificate

The course is free to enroll and learn from. But if you want a certificate, you have to register and write the proctored exam conducted by us in person at any of the designated exam centres.
The exam is optional for a fee of Rs 1000/- (Rupees one thousand only).
Date and Time of Exams:April 27, 2025 Morning session 9am to 12 noon; Afternoon Session 2pm to 5pm.
Registration url: Announcements will be made when the registration form is open for registrations.
The online registration form has to be filled and the certification exam fee needs to be paid. More details will be made available when the exam registration form is published. If there are any changes, it will be mentioned then.
Please check the form for more details on the cities where the exams will be held, the conditions you agree to when you fill the form etc.

CRITERIA TO GET A CERTIFICATE

Average assignment score = 25% of average of best 8 assignments out of the total 12 assignments given in the course.
Exam score = 75% of the proctored certification exam score out of 100

Final score = Average assignment score + Exam score

Please note that assignments encompass all types (including quizzes, programming tasks, and essay submissions) available in the specific week.

YOU WILL BE ELIGIBLE FOR A CERTIFICATE ONLY IF AVERAGE ASSIGNMENT SCORE >=10/25 AND EXAM SCORE >= 30/75. If one of the 2 criteria is not met, you will not get the certificate even if the Final score >= 40/100.

Certificate will have your name, photograph and the score in the final exam with the breakup.It will have the logos of NPTEL and IIT Roorkee .It will be e-verifiable at nptel.ac.in/noc.

Only the e-certificate will be made available. Hard copies will not be dispatched.

Once again, thanks for your interest in our online courses and certification. Happy learning.

- NPTEL team


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