Week 1: Introduction to Wireless Systems: Classification of wireless systems; Design and performance issues: Choice of operating frequency, multiple access and duplexing, circuit switching versus packet switching, propagation, radiated power and safety; Cellular telephone systems and standards.
Week 2: Noise in RF integrated Systems: Basic threshold detection, noise temperature and noise figure, noise figure of a lossy transmission line; Noise figure of cascade systems: Noise figure of passive networks, two-port networks, Noise in Active components: CMOS/ BiCMOS,
Week 3: Distortion in Receiver Design: Linearity, Intermodulation, Dynamic Range, Sensitivity of the receiver, Spurious Free Dynamic Range (SFDR).
Week 4: Receiver Architecture such as heterodyne, homodyne, Hartley, Weaver, advanced receiver architecture etc.,
Week 5: Active Device: Comparison of active devices such as BJT, MOSFET, MESFET, HEMT, and HBT; Circuit models for FETs and BJTs; Basic parameters of active devices such as ft/fmax, transconductance, capacitance, resistance, etc.
Week 6: Passive Components and Impedance Matching: On-chip Inductor, capacitor, resistor, resonant circuit and its application in RF IC. Various impedance matching techniques.
Week 7: Amplifier Design: Transistor Theory, Transistor S-parameters, gain & Stability, Unilateral and bilateral design, low noise amplifier (LNA Design)
Week 8: Various LNA topologies: CS/CE stage with inductive load, CS/CE stage with resistive feedbac, CG/CB topologies, noise cancellation techniques, differential LNA, Broad band amplifier design, Biasing in RF & microwave circuits
Week 9: Mixers: Mixer characteristics: Image frequency, conversion loss, noise figure; Devices for mixers: p-n junctions, Schottky barrier diode, FETs; Diode mixers: Small-signal characteristics of diode, single-ended mixer, large-signal model, switching model; FET/MOSFET Mixers: Single-ended mixer, other FET mixers; Balanced mixers; Image reject mixers.(cont)
Week 10: Mixers: Mixer characteristics: Image frequency, conversion loss, noise figure; Devices for mixers: p-n junctions, Schottky barrier diode, FETs; Diode mixers: Small-signal characteristics of diode, single-ended mixer, large-signal model, switching model; FET/MOSFET Mixers: Single-ended mixer, other FET mixers; Balanced mixers; Image reject mixers.
Week 11: Oscillators and Frequency Synthesizers: General analysis of RF oscillators, transistor oscillators, voltage-controlled oscillators, dielectric resonator oscillators, frequency synthesis methods, analysis of first and second order phase-locked loop, oscillator noise and its effect on receiver performance.(cont)
Week 12: Oscillators and Frequency Synthesizers: General analysis of RF oscillators, transistor oscillators, voltage-controlled oscillators, dielectric resonator oscillators, frequency synthesis methods, analysis of first and second order phase-locked loop, oscillator noise and its effect on receiver performance.
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