Week 1: Introduction to the course: perspective & historical overview, Applications of various RF devices today
Week 2: Basics of heterojunctions and heterostructure physics, Basics of III-nitrides and polarization Schottky multipliers & varactors
Week 3: Transferred Electron Devices: Gunn Diode, Avalanche Transit Devices: IMPATT
Week 4: III-V MESFET: physics and transport, I-V, load line, transconductance, fabrication. Intro to JFOM.
Week 5: III-V HEMT/MODFET – physics, modulation doping & the formation of 2DEG, breakdown, gain, traps, dispersion.
Week 6: p-HEMT, recess gate, field-plate, power cell, multi-finger devices, fabrication.
Week 7: GaN HEMTs – benefits of WBG, various aspects of GaN RF HEMT such as substrate, processing, dispersion & virtual gate, leakage, stack design, compensation doping
Week 8: Basics of RF CMOS;LDMOS – device physics, transport, breakdown, On resistance, snapback.
Week 9: LDMOS - layout & design, bond pad manifold, frequency aspects, the concept of RESURF.
Week 10: Bipolar devices for RF: working of HBT, Early Effect, Kirk Effect, Gain, Common Emitter & Common Base mode, small-signal model.
Week 11: Bipolar devices: base design, collector design, emitter ballast, SiGe bipolar, FET vs bipolar for RF, fabrication
Week 12: Microwave concepts for devices and packaging: S-parameters & 2-port analysis, concept of impedance, Intro to Smith chart, de-embedding parasitics, derivation of cut-off frequencies and MAG/MSG, Transmission lines & waveguides, concept of impedance matching, Basics of RF device packaging and thermal management
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