Week 1: Introduction to nanoelectronics – device scaling, how device physics is fundamentally different in mesoscopic and nano devices – voltage drop, heat dissipation etc., Necessity to understand and invoke quantum mechanics in nanoelectronics.
Week 2: Introduction to quantum mechanics, Schrödinger equation, Free electron wavefunction, Particle/electron in a box, electrons in a solid.
Week 3: Introduction to KP model, Brillouin Zones, KP model – origin of energy bands in solids.
Week 4: Density of states – 0D, 1D, 2D, 3D conductors, Fermi function, The notion of modes in a conductor.
Week 5: Conductance, Bottom-up approach, Landauer’s formalism, Ballistic and Diffusive transport – transmission, transition from ballistic to diffusive transport.
Week 6: Introduction to MOSFET – A barrier-controlled device, MOSFET electrostatics.
Week 7: MOSFET 2D electrostatics, MOSFET Capacitance.
Week 8: High-K dielectric, Strained Si technology, Quantum confinement in MOSFET.
Week 9: ETSOI-MOSFET, Transport in MOSFET, Ballistic MOSFET.
Week 10: Ballistic injection velocity in MOSFET, Thermoelectric effects and thermoelectric devices.
Week 11: Quantum dot devices – quantum capacitance, IV characteristics, self-consistent method.
Week 12: Introduction to ab initio simulation, NEGF, Summary of the entire course.